METHODS OF REDUCING THE ELECTRICAL AND THERMAL RESISTANCE OF SiC SUBSTRATES AND DEVICES MADE THEREBY

ABSTRACT

A power semiconductor device includes a silicon carbide substrate and at least a first layer or region formed above the substrate. The silicon carbide substrate has a pattern of pits formed thereon. The device further comprising an ohmic metal disposed at least in the pits to form low-resistance ohmic contacts.

This application claims the benefit of U.S. Provisional PatentApplication Ser. No. 62/121,916, filed Feb. 27, 2015, the entirety ofwhich is incorporated herein by reference.

BACKGROUND OF THE INVENTION

The present invention generally relates to semiconductor devices. Moreparticularly, this invention relates to silicon carbide (SiC)semiconductor power switching devices and methods of making the same.

Silicon carbide (SiC) semiconductor power switching devices such asSchottky diodes and MOS transistors (MOSFETs) are in commercialproduction at various companies around the world, and are increasinglymaking their way into systems. Accordingly, there is an ongoing desirefor methods by which the performance of these devices may be improvedand their cost of manufacture reduced.

SUMMARY

Embodiments of the present invention provide an improvement to the artby providing a design of a silicon carbide power semiconductor devicethat employs a pattern of pits and ohmic contacts within the pits toreduce the specific on-resistance (or resistance-area product) of thedevice.

A first embodiment is a power semiconductor device that includes asilicon carbide substrate and a least a first region or layer formedthereon. The silicon carbide substrate has a pattern of pits formedthereon. The device further includes an ohmic metal disposed at least inthe pits to form low-resistance ohmic contacts.

Examples of the first embodiment may include Schottky diodes, D-MOSFETs,and IGBTs.

Another embodiment is a method of forming at least a part of a powersemiconductor device that includes at least a first layer formed above afirst side of silicon carbide substrate. The method also includesforming a pattern of pits on a second side of the silicon carbidesubstrate. The method also includes locating an ohmic metal at leastwithin the pits to define low-resistance ohmic contacts.

The presence of the pattern of pits and ohmic contacts provides areduced on resistance which improves the device operation. Such featuresand advantages, as well as others, will become readily apparent to thoseof ordinary skill in the art by reference to the following detaileddescription and accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph showing the various components of the specificon-resistance R_(ON,SP) of state-of-the-art SiC power DMOSFETs as afunction of blocking voltage;

FIG. 2 illustrates a representational bottom plan view of a substratethat may be used in a power semiconductor device in accordance with atleast one embodiment of the invention.

FIGS. 3a-3c illustrate a process of generating a Schottky diode inaccordance with at least one embodiment of the invention.

FIGS. 4a-4c illustrate a process of generating a D-MOSFET device inaccordance with at least one embodiment of the invention.

FIGS. 5a-5e illustrate an alternative process of generating a D-MOSFETdevice in accordance with at least one embodiment of the invention.

FIG. 6 illustrates an exemplary IGBT device in accordance with at leastone embodiment of the invention.

DETAILED DESCRIPTION

During investigations leading to the present invention, performancelimit studies of various silicon carbide (SiC) semiconductor powerswitching devices such as Schottky diodes and MOS transistors (MOSFETs)suggested that the performance of such devices is limited by theelectrical resistance of the SiC substrate on which they are fabricated,especially at blocking voltages below about 2,000 V. FIG. 1 provides agraph representing the internal resistance components ofstate-of-the-art SiC power DMOSFETs as a function of blocking voltage.The specific on-resistance (or resistance-area product) R_(ON,SP) wasfound to be the most important measure of device performance, since thedevice cost scales as the square root of R_(ON,SP) In other words, ifR_(ON,SP) can be reduced by a factor of four, the device cost may bereduced by a factor of two while delivering the same performance. FIG. 1indicates that the substrate resistance R_(SUB) is the dominantresistance component at blocking voltages below about 2,000 V.

SiC substrates are typically about 400 μm thick with a resistivity ofabout 18 to about 20 mΩcm. The specific substrate resistance R_(SUB) isgiven by the product of thickness and resistivity. It is believed to notbe possible to reduce the resistivity below about 18 to about 20 mΩcmbecause of fundamental limitations of the material, so the only solutionis to reduce the thickness of the substrate. When manufacturing DMOSFETsand similar devices, the substrate can be thinned as the last step inthe fabrication process, but it is impractical to thin the substratebelow about 100 to about 150 μm because of breakage during saw-apart andpackaging. Consequently, there is a need for a way to reduce thesubstrate resistance below the value that can be achieved by thinning toabout 100 to about 150 μm.

According to aspects of the present invention, SiC substrate resistancemay be reduced without reducing the mechanical integrity of thesubstrate by etching pits or vias at least partially, and preferablymost of the way, through the substrate in a regular pattern, and thenfilling the vias with ohmic metal and processing to form low-resistanceohmic contacts.

FIG. 2 shows a bottom plan view of an exemplary substrate 200 that mayform part of a device that includes a region or layer in which a pattern202 of pits or vias 204 are formed. Between adjacent pits is a grid 206of unetched ridges 208 that provide mechanical strength while theintervening vias 204 provide low-resistance electrical paths that reducethe overall substrate resistance.

Suitable manufacturing processes would allow for about 100 to about 200μm vias to be etched in SiC substrates using, for example,inductively-coupled plasma (ICP) reactive-ion etching (RIE) in SF₆ andO₂. Such processes would not only reduce the electrical resistance ofthe substrate, but the thermal resistance as well. SiC power devicesdissipate significant heat during operation, with power densities ofabout 150 to about 250 W/cm² being fairly typical. This heat must beremoved through the substrate to keep the surface temperature belowabout 150 to about 200° C. for long-term reliable operation of thedevices. The temperature rise across the substrate is the product of thethermal resistivity times the thickness. Processes as described abovereduce the effective thickness, thereby reducing both electrical andthermal resistance of the substrate.

FIGS. 3a-3c illustrate an exemplary method of fabricating powersemiconductor device in the form of a Schottky diode 300 thatincorporates the pit structure of the invention. FIG. 3a illustrates acutaway schematic view of an intermediate structure 302 duringfabrication, FIG. 3b shows a cutaway schematic view of a furtherintermediate structure 302′, and FIG. 3c shows a cutaway schematic viewof the final structure of the exemplary Schottky diode 300.

Referring to FIG. 3a , the intermediate structure 302 has a siliconcarbide wafer 304 having a silicon carbide substrate 306 and a firstlayer 308 formed on a first or upper surface 316 thereof. The substrate306 has a first doping type, for example, n-type, at a firstconcentration, for example a highly doped n+ layer. The first layer 308has the first doping type (e.g. n-type) at a second, lower,concentration, for example a low doped n− layer. A suitable barriermetal 310 is disposed on the first layer 308 on a first surface 312 ofthe silicon carbide wafer 304. The junction of the barrier metal 310 andthe second layer 308 form a Schottky barrier 314.

In essence, the structure 302 of FIG. 3a includes all of the structuresof a conventional silicon carbide Schottky diode except for the contacton the bottom or second surface 317. The fabrication of the intermediatestructure 302 is well known and may be carried out in any suitablemanner. Indeed, other variants of intermediate structures for Schottkydevices including those in which a contact metal is disposed on thebarrier metal 310 may be employed.

After fabrication of the intermediate structure 302, a pattern of pitsis formed in the bottom surface 317 of the substrate 306 to a depth mostof the way through the substrate 306. FIG. 3b shows the intermediatestructure 302′ which represents the intermediate structure 302 after thepattern of pits 318 is formed most of the way through the first layer306. The pattern of pits 318 may suitably have the same pattern as thepattern 202 of FIG. 2. Similar to FIG. 2, ridges 320 separate adjacentpits 318. The pits 318 in this embodiment are formed by reactive ionetching (“RIE”). The pits 318 should extend at least 30% through thethickness of the substrate 306. While the pits 318 should preferablyextend over 90% through the thickness of the first layer 306, for verythin devices (substrate layer 306 of 100-200 μm) the RIE process has amargin of error. To avoid extending the pits into the second layer 308,a buffer of approximately 30% of the width of the region/layer 306,which is the majority of the device 302′, is provided. As processesimprove, or if more accurate etching depths can be achieved, the pits318 can extend further.

After forming the pattern of pits 318, ohmic metal is applied to thesecond surface 317. As shown in FIG. 3c , the final device 300 includesthe ohmic metal contact layer 322 that covers the pits 318 and theridges 320. The ohmic metal contact layer 322 may suitably be processedby laser annealing. In this exemplary embodiment, the ohmic metalcontact layer 322 covers the walls 324 and tops 326 of the ridges 320,thereby forming an accessible contact on the tops 326 that isconductively connected to the innermost region 328 of the pits 318.

It will be appreciated, however, that it is not necessary that we havethe ohmic contact 322 on walls 324 and tops 326 of the ridges 320, butrather only on the innermost region 328 of the pits 318. In such otherembodiments, another highly-conductive connection would be formedbetween the ohmic contacts 322 and the tops of the ridges. Thishighly-conductive connection could be formed by a second deposition of aconductive material that is in contact with the ohmic metal 322 at theinnermost region 328 of the pits 318. This second material might be ametal, a conductive epoxy, or any suitable material having highelectrical and thermal conductivity.

As a consequence, the electrically functional thickness of the device300 is defined from the top of the barrier metal 310 to the innermostregions 328 of the pits 318. This provides for a relatively thin activedevice, while the walls 324 of the ridges 320 provide a mechanicalstrength of a much thicker device.

FIGS. 4a-4c show an exemplary method of fabricating a powersemiconductor device in the form of a D-MOSFET 400 that incorporates thepit structure of the invention. FIG. 4a illustrates a cutaway schematicview of an intermediate structure 402 during fabrication, FIG. 4b showsa cutaway schematic view of another intermediate structure 402′, andFIG. 4c shows a cutaway schematic view of the final structure of theexemplary D-MOSFET 400.

Referring to FIG. 4a , the intermediate structure 402 has a siliconcarbide substrate 412 and a first region or layer 414. The siliconcarbide substrate region 412 has a first doping concentration of a firstdoping type, for example, an n+ doping. The first layer comprises adrift layer 414 formed above a top surface 417 of the substrate region412 and having a lighter doping concentration of the first doping type,for example, an n− doping. The intermediate structure 402 also includesat least one source region 446, 448, at least one base region 426, 428,a dielectric region 456, and a gate contact 454.

The layout and fabrication of the intermediate structure 402 issubstantially the same as the DMOSFET device shown in FIG. 1 of U.S.Patent Publication No. 2006/0192256, which is incorporated herein byreference. However, it will be appreciated that corresponding elementsof other DMOSFET devices may be employed.

The at least one source region 446, 448 has the first doping type, andis preferably heavily doped. In the embodiment described herein wherethe first doping type is n-type, the two source regions 446, 448 includen+ doped regions formed near the first surface 413, above the driftlayer 414. The two source regions 446, 448 are spaced apart laterally.

Each of the base regions 426, 428 has the second doping type and isdisposed between a corresponding one of the source regions 446, 448 andthe drift layer 414. The base regions 426, 428 in this embodiment are p+regions, sometimes referred to as p-wells. As is known in the art, thebase region 426 is disposed under the source region 446 and also has aportion that extends to the first surface 413 in the space between thesource regions 446, 448. Likewise, the base region 428 is disposed underthe source region 448 and also has a portion extends to the firstsurface 413 in the space between the source regions 446, 448.

The dielectric region 456 is formed above the drift layer; and extendslaterally at least over the portions of the base regions/p-wells 426,428 that extend to the first surface 413. The gate contact 454 is aconductive layer or structure formed above dielectric region 456 andabove at least a portion of the base regions 426, 428. As is known inthe art, the gate contact 454 may also extend laterally at leastslightly over each of the source regions 446, 448.

In accordance with the exemplary embodiment described herein theintermediate structure 402 (and final device 400) also includes acurrent spreading layer 420 having a doping of the first type (e.g.n-type) having a concentration that is greater than the dopingconcentration of the drift layer 414 and less than the dopingconcentration than the substrate layer 412 and the source regions 446,448. The current spreading layer 420 is disposed immediately above thedrift layer 414 and below (and abutting) the base regions 426 and 428.The structure 402 also includes a JFET region 430 between the baseregions (p-wells) 426, 428 and underneath the gate contact 454. The JFETregion 430 has the first doping type. The details of the structure andoperation of the current spreading layer 420 and JFET region 430 aredescribed in U.S. Patent Publication No. 2006/0192256. It will beappreciated, however, that other DMOSFET structures would not requiresuch a current spreading layer 420.

In essence, the structure 402 can have all of the structures of avertical silicon carbide DMOSFET except for the contact on the secondsurface 415. The fabrication of the intermediate structure 402 is wellknown and may be carried out as described in U.S. Patent Publication No.2006/0192256.

After fabrication of the intermediate structure 402, a pattern of pitsis formed in the second surface 415 to a depth most of the way throughthe first layer 412. FIG. 4b shows the intermediate structure 402′ whichrepresents the intermediate structure 402 after the pattern of pits 460is formed most of the way through the first layer 412. The pattern ofpits 460 may suitably have the same pattern as the pattern 202 of FIG.2. Similar to FIG. 2, walls or ridges 462 separate adjacent pits 460.The pits 460 in this embodiment may suitably be formed by reactive ionetching (“RIE”), similar to the method described above in connectionwith FIG. 2. The pits 460 should extend at least 30% through thethickness of the first layer 412.

After forming the pattern of pits 460, the ohmic metal is applied to thesecond surface 415 with the pits 460. As shown in FIG. 4c , the finaldevice 400 includes the ohmic metal contact layer 464 that covers thepits 460 and the ridges 462. The ohmic metal contact layer 464 isprocessed by laser annealing methods. The ohmic metal contact layer 464in this embodiment covers the walls 466 and tops 468 of the ridges 462,thereby forming an accessible contact on the tops 468 that isconductively connected to the innermost region 470 of the pits 460.However, as discussed above, in other embodiments, the metal contactlayer 464 may only cover the innermost region 470 of the pits 460 (andin some cases the tops 468 as well). Another conductive material may beapplied in the pits 460 as discussed above.

As a consequence, the electrically functional thickness of the device400 is defined from the gate contact 454 to the innermost regions 470 ofthe pits 460. This provides for a very thin active portion of thedevice, while the walls 466 of the ridges 462 provide a mechanicalstrength of a much thicker device. It will further be appreciated thatthe advantages of the pits 460 and metal contact layer 464 may berealized in D-MOSFETs having different structures, such as those that donot necessarily include a current spreading layer 420, or those thatinclude additional elements.

In an alternative embodiment, the D-MOSFET similar to that of FIG. 4cmay be developed using a substrate that includes buried etch stop layersto allow the pits to extend substantially all of the way through thesubstrate layer 412. In particular, FIG. 5a shows an intermediatestructure 502 a which has the same elements as the intermediatestructure 402 of FIG. 4a , but which also includes a buried etch stoplayer 504 of the second doping type, for example a p+ doped etch stoplayer. The etch stop layer 504 may suitably be 1 or 2 μm and is disposedimmediately above and adjacent to the substrate layer 412. Theintermediate structure 502 a further includes a second etch stop layer506 which is over the first doping type, and preferably at a dopingconcentration that is higher than that of the drift layer 414. Thesecond etch stop layer 506 may suitable be an n+ type layer in theexample described herein. The second etch stop layer 506 may alsosuitably be 1 or 2 μm.

To prepare the pits in the embodiment of FIGS. 5a -5 e, the pits areetched most of the way through the substrate layer 412 using RIE,similar to that used in the embodiments of FIGS. 2, 3 and 4 a-4 c. FIG.5b shows an intermediate structure 502 b having the pits 510 etchedpartially through, similar to those shown in FIG. 4b . After the RIEstep, the remainder of the substrate layer 414 in the pits 510 is etchedusing photo-electrochemical etching through to the p+ etch stop layer504. The result of this step is the intermediate structure 502c shown inFIG. 5 c. The pits 510′ extend all of the way to the p+ etch stop layer504.

Thereafter, the p+ etch stop layer 504 at the innermost part 512 of thepits 510′ is etched away using electrochemical etching processes. Theresult of this step is that the pits 510″ extend all the way to thesecond etch stop layer 506. The result is the intermediate device 502 dshown in FIG. 5d . Thereafter, the contact metal layer 464 is applied(e.g. by laser annealing) as described above, producing a finalstructure 500 as shown in FIG. 5e . In this embodiment, it can be seenthat the pits 510″ extend almost all of the way through the substratelayer 412. This provides an even more favorable on-resistancecharacteristic and eliminates processing variations due tonon-uniformity in the thickness of the original substrate 412 and/orpoor control of the RIE step that forms the structure of FIG. 5 b.

In view of the above, it can be seen that a significant advantage ofthis invention is that resistance of SiC substrates may be reduced belowthe value that can be achieved by conventional thinning techniques,resulting in more efficient and lower cost SiC substrate-based devices.Although the invention has been described in terms of SiC substrates, itis foreseeable that aspects of the present invention may be similarlyapplicable to substrates formed of other materials.

In yet another embodiment, an insulated gate bipolar transistor (IGBT)having the pitted silicon carbide substrate can be realized in a variantof the process of FIGS. 5a -5 e. In particular, instead of etching thep+ etch stop layer 504, the metal contact 464 is formed over the pits510′ of FIG. 5c , including portions of the p+ etch stop layer 504exposed within the pits 510′. The etch stop layer 504 in this embodimentforms a buffer layer of the IGBT. Such a process produces the final IGBTstructure 600 shown in FIG. 6.

While the invention has been described in terms of specific embodiments,it is apparent that other forms could be adopted by one skilled in theart. For example, the etched pattern on the substrate could differ inappearance and construction from the embodiment shown in the Figures,and appropriate materials could be substituted for those noted.Moreover, it will be appreciated that the device fabrications methodsillustrated in FIGS. 3a -3 c, 4 a-4 c, and 5 a-5 e, the formation of thepits need not occur after the other parts of the device are completed.For example, the pits 318 may be formed in the substrate 306 of FIG. 3abefore one or more of the layer 308 or barrier metal layer 310. Inanother example, the pits 460 of FIGS. 4b may be formed at various timesbefore the completion of the intermediate structure 402 shown in FIG. 4a. Moreover, the ohmic contacts in the various embodiments need not beformed immediately after the formation of the pits. For example, it ispossible that some of the elements of the structure 402 of FIG. 4a aregenerated after formation of the pits 460, but before the formation ofthe ohmic metal layer 464.

Accordingly, it should be understood that the invention is not limitedto the specific embodiments illustrated in the Figures. It should alsobe understood that the phraseology and terminology employed above arefor the purpose of disclosing the illustrated embodiments, and do notnecessarily serve as limitations to the scope of the invention. Finally,while the appended claims recite certain aspects believed to beassociated with the invention, they do not necessarily serve aslimitations to the scope of the invention.

1. A power semiconductor device comprising a silicon carbide substrateand having at least a first layer or region formed above the substrate,the silicon carbide substrate having a pattern of pits formed thereon,the device further comprising an ohmic metal disposed at least in thepits to form low-resistance ohmic contacts.
 2. The power semiconductordevice of claim 1, wherein the pits are formed in a grid pattern.
 3. Thepower semiconductor device of claim 1, wherein the substrate has a firstdoping type at a first concentration, and the first layer or region hasthe first doping type at a second concentration, the secondconcentration less than the first concentration, and further comprising:a barrier metal disposed on the first layer; and wherein the pattern ofpits are formed most of the way through the thickness of the substrate.4. The power semiconductor device of claim 3, wherein the pits have adepth of at least 30% of the thickness of the substrate.
 5. The powersemiconductor device of claim 1, further comprising: a substrate regionhaving the pattern of pits formed therein, the substrate region having aa first doping concentration of a first doping type; a drift layerhaving a second doping concentration of the first doping type, thesecond doping concentration less than the first doping concentration; atleast one source region of the first doping type formed above the driftlayer; at least one base region of the second doping type between the atleast one source region and the drift layer a dielectric region formedabove the drift layer; and a gate contact formed above dielectric regionand above at least a portion of the at least one base region.
 6. Thepower semiconductor device of claim 5, further comprising a buffer layerof the second doping type disposed between substrate region and thedrift layer.
 7. The power semiconductor device of claim 5, wherein thepits have a depth of at least 30% of the thickness of the substrateregion.
 8. The power semiconductor device of claim 7, further comprisinga stop layer disposed laterally adjacent to and between the pits, thestop layer having the second doping type.
 9. The power semiconductordevice of claim 8, further comprising a second stop layer disposedvertically between the stop layer and the drift layer.
 10. The powersemiconductor device of claim 5, further comprising: a current spreadinglayer disposed at least in part between the drift layer and the at leastone base region, the current spreading layer having a third dopingconcentration of the first doping type, the third doping concentrationgreater than the second doping concentration.
 11. A method of forming atleast a part of a power semiconductor device, the method comprising: a)forming at least one layer on a first side of silicon carbide substrate;b) forming a pattern of pits on a second side of the silicon carbidesubstrate; and c) locating an ohmic metal at least within the pits todefine low-resistance ohmic contacts.
 12. The method of claim 11,wherein the power semiconductor device includes at least a substrateregion including the pattern of pits and a first layer disposed betweenthe substrate region and an ohmic contact, wherein the substrate regionhas a first doping concentration of a first doping type and the firstlayer has a second doping concentration of the first doping type, thesecond doping concentration less than the first doping concentration.13. The method of claim 12, wherein step b) further comprises: b1)forming a least a portion of the pits using reactive ion etching. 14.The method of claim 13, wherein substep b1) comprises forming the pitsto have a depth of at least 30% of the substrate region thickness. 15.The method of claim 13, wherein substep b1) further comprises usingreactive ion etching followed by photoelectrochemical etching to etch toan etch stop layer disposed between the substrate region and the secondregion, the etch stop layer having a second doping type.
 16. The methodof claim 15, further comprising, after substep b1): b2) etching the etchstop layer using a different etching process.
 17. The method of claim16, wherein the different etching process is electrochemical etching.18. The method of claim 11, wherein step c) further comprises formingthe ohmic contacts using laser annealing.